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1200V 600A Highly Reliable Industrial Trench-Gate Field-Stop IGBT Module

1200V 600A Highly Reliable Industrial Trench-Gate Field-Stop IGBT Module

Name: 1200V 600A Highly Reliable Industrial Trench-Gate Field-Stop IGBT Module
Availability: InStock

The power blocking voltage of this module has been increased to 1200V. It features high short-circuit capability and a working junction temperature of 150°C. It uses a copper substrate and standard packaging, and is suitable for frequency converters, uninterruptible power supplies, motor drives, and solar power generation. It supports mass production, and the array-type terminals can be customized as needed, providing flexible adaptation to various circuit topologies.

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Core Product Features

1. 1200V High Voltage Resistance Design

The breakdown voltage has been raised to 1200V, suitable for industrial high-voltage systems, with stable voltage resistance and strong shock resistance.

2. 600A High Current High Power Output

Rated continuous current is 600A, peak current can reach 1200A, meeting the requirements of high-power frequency conversion and drive scenarios.

3. Advanced Structure of Groove Gate/Field Cut-off

Trench Gate + Field Stop structure, reducing conduction loss, improving switching efficiency and reliability.

4. Built-in NTC Temperature Real-time Monitoring

On-board NTC thermistor, supporting precise temperature control, improving the long-term stability of the system.

5. High Short-Circuit Capacity Stronger Safety

Excellent short-circuit current capacity, suitable for industrial heavy loads, frequent start-stop and other high-demand scenarios.

6. Copper Baseplate + Standard Packaging Excellent Heat Dissipation

Lower thermal resistance of the copper baseplate, fast heat dissipation, longer lifespan.

7. Industrial-grade Wide Temperature Stable Operation

Adaptable to harsh environments, suitable for outdoor and industrial sites.

Five Reasons to Choose WISEDRV

1. Original Design - Stable and Controllable Quality

Self-developed IGBT module, from chip design to packaging and testing, full process control ensures high consistency and low failure rate.

2. High Performance and Affordable Price - Stable Supply

High performance, better price, faster delivery, and support for stable batch supply.

3. Rigorous Testing - Reliable Guarantee

Each module passes multiple reliability tests such as insulation withstand voltage, thermal resistance, switching characteristics, and high/low temperature cycling.

4. One-stop Technical Support

Provide application solutions, drive matching suggestions, heat dissipation design guidance, and technical collaboration.

5. Stock Inventory - Mass Production

Regular stock available, supports batch orders, and quick delivery without delaying project cycles.

Applicable application scenarios

Frequency Converter

Uninterruptible Power Supply

Motor Drives

Solar Power

Our factory and production capabilities

1. Modern IGBT module packaging production line.

2. Adopting industrial standard packaging structure.

3. Full inspection upon leaving the factory to ensure product consistency.

4. Strict electrostatic protection and dust-free workshop.

5. Equipped with high and low temperature aging and reliability laboratories.

Specification parameters:

IGBT, Inverter

Maximum rated Values

Parameter	Symbol	Conditions	Value	Unit
Collector-emitter voltage	V_CES	T_vj=25℃	1200	V
Continuous DC forward current	I_C nom	T_C=75℃ T_{vj max}=175℃	600	A
Repetitive peak forward current	I_CRM	t_p=1 ms	1200	A
Total power dissipation	P_tot	T_C=25℃, T_{vj max}=175℃	2727	W
Gate-emitter peak voltage	V_GES		±30	V

Characteristic Values

Parameter	Symbol	Conditions		Value			Unit
Parameter	Symbol	Conditions		MIN.	Typ.	MAX.	Unit
Collector-emitter saturation voltage	V_CE(sat)	V_GE = 15 V, I_C = 600 A	T_vj = 25℃ T_vj=125℃ T_vj=150℃	- - -	2.31 2.86 2.98	3 - -	V
Gate threshold voltage	V_GE(th)	I_C = 23 mA, V_CE = V_GE, T_vj= 25℃		4.0	6.11	7.0	V
Collector-emitter cut-off current	I_CES	V_CE = 1200 V ,V_GE = 0 V T_vj= 25℃		-	-	1	mA
Gate-emitter leakage current	I_GES	V_CE = 0 V, V_GE = 20 V, T_vj = 25℃		-	-	400	nA
Gate charge	Q_G	V_CC = 600 V, I_C = 600 A, V_GE = 15 V		-	3260	-	nC
Turn-on delay time	t_d(on)	V_CE=600V, I_C = 600A, V_GE = ±15V, R_G= 10.0 Ω	Tvj = 25℃ Tvj=125℃ Tvj=150℃	- - -	0.52 0.45 0.43	- - -	μs
Rise time, inductive load	t_r		Tvj = 25℃ Tvj=125℃ Tvj=150℃	- - -	0.27 0.29 0.30	- - -
Turn-off delay time, inductive load	t_d(off)		Tvj = 25℃ Tvj=125℃ Tvj=150℃	- - -	1.27 1.33 1.34	- - -
Fall time, inductive load	t_f		Tvj = 25℃ Tvj=125℃ Tvj=150℃	- - -	0.51 0.51 0.47	- - -
Turn-on energy loss per pulse	E_on		Tvj = 25℃ Tvj=125℃ Tvj=150℃	- - -	174 220 238	- - -	mJ
Turn-off energy loss per pulse	E_off		T_vj= 25℃ T_vj=125℃ T_vj=150℃	- - -	172 175 169	- - -	mJ
SC data	I_SC	V_GE =15 V,V_CC= 600 V t_P = 10 µs, T_vj= 150℃		-	2734	-	A
Thermal resistance, junction-case	R_thJC	per IGBT		-	-	0.055	K/W
Temperature under switching conditions	T_vj op			-40	-	150	℃

Diode, Inverter

Maximum ratings Values

Parameter	Symbol	Conditions	Value	Unit
Repetitive peak reverse voltage	V_RRM	T_vj=25∘C	1200	V
Continuous DC forward current	I_F		600	A
Repetitive peak forward current	I_FRM	t_p=1 ms	1200	A

Characteristic Values

Parameter	Symbol	Conditions		Value			Unit
Parameter	Symbol	Conditions		MIN.	Typ.	MAX.	Unit
Forward voltage	V_F	V_GE = 0V, I_F = 600 A	T_vj= 25℃ T_vj=125℃ T_vj=150℃	- - -	2.34 2.39 2.41	3.0 - -	V
Peak reverse recovery current	I_RM	V_R= 600 V, -di_F/dt=631A/µs (T_vj=150°C) I_F= 600 A V_GE=-15 V	Tvj = 25℃ Tvj=125℃ Tvj=150℃	- - -	125 205 228	- - -	A
Recovery charge	Q_r		Tvj = 25℃ Tvj=125℃ Tvj=150℃	- - -	7.70 7.76 7.58	- - -	μC
Reverse recovery energy per pulse	E_rec		Tvj = 25℃ Tvj=125℃ Tvj=150℃	- - -	6.72 19.3 25.5	- - -	mJ
Thermal resistance, junction-case	R_thJC	per diode		-	-	0.097	K/W
Temperature under switching conditions	T_{vj op}			-40	-	150	℃

NTC-Thermistor

Characteristic Values

Parameter	Symbol	Conditions	Value	Unit
Rated resistance	R₂₅	T_NTC=25℃	5.00	kΩ
Deviation of R100	\|∆R\|/R	T_NTC= 100°C, R₁₀₀ = 493 Ω	5	%
B-value	B_25/50	Calculated from resistance value at 25℃ and 50℃	3375	K
B-value	B_25/80	Calculated from resistance value at 25℃ and 80℃	3411	K
B-value	B_25/100	Calculated from resistance value at 25℃ and 100℃	3433	K

Module

Parameter	Symbol	Conditions	Values	Unit
Isolation test voltage	V_ISOL	RMS, f=0 Hz, t=1.2 sec	4.7	kV
Material of Module baseplate			Cu
Material of Internal Isolation			Al₂O₃
Creepage distance		Terminal to heatsink Terminal to terminal	15.0 13.0	mm
Clearance		Terminal to heatsink Terminal to terminal	12.5 10.0	mm
Stray inductance module	L_S		20	nH
Storage temperature	T_stg		-40 ~125	℃
Mounting torque for module mounting	M	Screw M5 - Mounting according to valid application note	3.0 ~ 6.0	N·m
Terminal connection torque	M	Screw M6 - Mounting according to valid application note	3.0 ~ 6.0	N·m
Weight	G		348	g