650V 200A Standard Package Frequency Converter Application IGBT Power Module

Name: 650V 200A Standard Package Frequency Converter Application IGBT Power Module
Availability: InStock

This power module adopts standard packaging and copper substrate design, specifically tailored for frequency converters, uninterruptible power supplies, motor drives and welding machines. It features a 650V breakdown voltage, high short-circuit capacity, and a working junction temperature of up to 150°C. It supports mass production and is compatible with mainstream industrial circuits, easily meeting the requirements of common industrial applications.

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Core Product Highlights

High voltage and high current, stable load capacity
With a blocking voltage of 650V, a continuous current of 200A, and a peak current of 400A, it can meet high-power working conditions. High short-circuit tolerance, making the equipment safer.
Low loss and high efficiency
Using a trench gate / non-through structure, the switching loss has been tested and calibrated. It has low loss and more efficient system operation.
Excellent heat dissipation and long lifespan
By using a copper substrate and an internal Al₂O₃ insulation structure, the heat dissipation efficiency is high and the insulation performance is reliable, ensuring the long-term stable operation of the module.

Application Scenario Frequency converter

1.Frequency converter

2.Uninterruptible Power Supply

3.Motor drive

4.Electric welding machine

Common FAQs

Q1: How many power devices can this module support?

A: 650V/200A specification, suitable for several thousand kW level medium to large power inverters / drives.

Q2: What is the working temperature range?

A: Working junction temperature range -40℃ ~ 150℃, ensuring reliable operation in industrial-grade high and low temperature environments.

Q3: What are the protection and safety features?

A: 2.5kV insulation withstand voltage, 10mm creepage distance, high short-circuit capacity, wide temperature range reliability, meeting industrial safety standards.

Specification parameters：

IGBT, Inverter

Maximum rated Values

Parameter	Symbol	Conditions	Values	Unit
Collector-emitter voltage	V_CES	T_vj= 25℃	650	V
Continuous DC collector current	I_C_nom	T_C = 70℃, T_{vj max} =150℃	200	A
Repetitive peak collector current	I_CRM	tP=1 ms	400	A
Total power dissipation	P_tot	T_C= 25℃, T_{vj max}= 150℃	698	W
Gate-emitter peak voltage	V_GES	-	±20	V

Characteristic Values

Parameter	Symbol	Conditions		Values			Unit
Parameter	Symbol	Conditions		Min.	Typ.	Max.	Unit
Collector-emitter saturation voltage	V_CE(sat)	V_GE =15V, I_C = 200A	T_vj= 25℃ T_vj= 125℃ T_vj= 150℃	- - -	1.70 2.00 2.10	1.9 - -	V
Gate threshold voltage	V_GE(th)	I_C =3.2 mA, V_CE = V_GE, T_vj= 25℃		5.0	5.832	6.8	V
Internalgate resistor	R_Gint	T_vj= 25℃		-	2	-	Ω
Collector-emitter cut-off current	I_CES	V_CE= 650 V , V_GE= 0V T_vj = 25℃		-	-	0.1	mA
Gate-emitter leakage current	I_GES	V_CE = 0 V, V_GE = 20 V, T_vj= 25℃		-	-	500	nA
Input capacitance	C_ies	V_CE = 25 V, V^GE = 0V, f = 1 MHz,T_vj= 25℃		-	15000	-	pF
Reverse transfer capacitance	C_res	V_CE = 25 V, V^GE = 0V, f = 1 MHz,T_vj= 25℃		-	280	-	pF
Turn-on delay time	t_d(on)	V_CE= 300 V, I_C = 200A, V_GE = ±15 V, R_G =4.7 Ω	T_vj= 25℃ T_vj = 125℃ T_vj = 150℃	- - -	0.106 0.116 0.118	- - -	μs
Rise time, inductive load	t_r		Tvj = 25℃ Tvj = 125℃ Tvj = 150℃	- - -	0.103 0.109 0.11	- - -
Turn-off delay time, inductive load	t_d(off)		Tvj = 25℃ Tvj = 125℃ Tvj = 150℃	- - -	0.165 0.177 0.179	- - -
Fall time, inductive load	t_f		Tvj = 25℃ Tvj = 125℃ Tvj = 150℃	- - -	0.084 0.096 0.1	- - -
Turn-on energy loss per pulse	E_on		Tvj = 25℃ Tvj = 125℃ Tvj = 150℃	- - -	1.591 3.045 3.442	- - -	mJ
Turn-off energy loss per pulse	E_off		Tvj = 25℃ Tvj = 125℃ Tvj = 150℃	- - -	4.458 5.176 5.37	- - -	mJ
SC data	I_sc	V_GE = 15 V,V_CC = 300 V t_P = 10 µs, T_vj = 150℃		-	960	-	A
Thermal resistance, junction-case	R_th_JC	per IGBT		-	-	0.179	K/W
Temperature under switching conditions	T_{vj op}			-40	-	150	℃

Diode, Inverter

Maximum ratings Values

Parameter	Symbol	Conditions	Values	Unit
Repetitive peak reverse voltage	V_RRM	T_v_j=25∘C	650	V
Continuous DC forward current	I_F		200	A
Repetitive peak forward current	I_FRM	t_p=1ms	400	A

Characteristic Values

Parameter	Symbol	Conditions		Values			Unit
Parameter	Symbol	Conditions		Min.	Typ.	Max.	Unit
Forward voltage	V_F	V_GE = 0 V, I_F = 200 A	T_vj = 25℃ T_vj= 125℃ T_vj= 150℃	- - -	1.661 1.682 1.651	2.25 - -	V
Peak reverse recovery current	I_RM	V_R=300V, I_F=200A, dI_F/dt=5400A/µs	Tvj = 25℃ Tvj = 125℃ Tvj = 150℃	- - -	76 85 89	- - -	A
Recovery charge	Q_r	V_R=300V, I_F=200A, dI_F/dt=5400A/µs	Tvj = 25℃ Tvj = 125℃ Tvj = 150℃	- - -	5.251 6.226 6.455	- - -	µC
Reverse recovery energy per pulse	E_rec	I_F=200A, V_R= 300V, V_GE = -15V	Tvj = 25℃ Tvj = 125℃ Tvj = 150℃	- - -	1.298 2.049 2.382	- - -	mJ
Thermal resistance, junction-case	R_thJC	per diode		-	-	0.303	K/W
Temperature over switching conditions	T_vj op			-40	-	150	℃

Module

Parameter	Symbol	Conditions	Values	Unit
Isolation test voltage	V_ISO_L		2.5	kV
Material of Module baseplate			Cu
Material of Internal Isolation			Al₂O₃
Creepage distance		Terminal to heatsink	10.0	mm
Stray inductance module	L_s		35	nH
Storage temperature	T_stg		−40∼125	∘C
Mounting torque for module mounting	M	Screw M6 - Mounting according to valid application note	3.0 ~ 6.0	N·m
Terminal connection torque	M	Screw M5 - Mounting according to valid application note	3.0 ~ 6.0	N·m
Weight	G		163	g