650V 200A Standard Package Frequency Converter Application IGBT Power Module

This power module adopts standard packaging and copper substrate design, specifically tailored for frequency converters, uninterruptible power supplies, motor drives and welding machines. It features a 650V breakdown voltage, high short-circuit capacity, and a working junction temperature of up to 150°C. It supports mass production and is compatible with mainstream industrial circuits, easily meeting the requirements of common industrial applications.

Order(MOQ) :
Based on full container load (FCL); exact quantity varies with the packaging solution of each product.
Product Origin :
Xiamen City,Fujian Province ,China
Color :
White
Lead Time :
From deposit to vessel loading : 30–35 days for regular bulk orders.

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Core Product Highlights

High voltage and high current, stable load capacity
With a blocking voltage of 650V, a continuous current of 200A, and a peak current of 400A, it can meet high-power working conditions. High short-circuit tolerance, making the equipment safer.
Low loss and high efficiency
Using a trench gate / non-through structure, the switching loss has been tested and calibrated. It has low loss and more efficient system operation.
Excellent heat dissipation and long lifespan
By using a copper substrate and an internal Al₂O₃ insulation structure, the heat dissipation efficiency is high and the insulation performance is reliable, ensuring the long-term stable operation of the module.

Application Scenario

1.Frequency converter

2.Uninterruptible Power Supply

3.Motor drive

4.Electric welding machine

Common FAQs

Q1: How many power devices can this module support?

A: 650V/200A specification, suitable for several thousand kW level medium to large power inverters / drives.

Q2: What is the working temperature range?

A: Working junction temperature range -40℃ ~ 150℃, ensuring reliable operation in industrial-grade high and low temperature environments.

Q3: What are the protection and safety features?

A: 2.5kV insulation withstand voltage, 10mm creepage distance, high short-circuit capacity, wide temperature range reliability, meeting industrial safety standards.

Specification parameters：

IGBT, Inverter

Maximum rated Values

Parameter	Symbol	Conditions	Values	Unit
Collector-emitter voltage	V_CES	T_vj= 25℃	650	V
Continuous DC collector current	I_C_nom	T_C = 70℃, T_{vj max} =150℃	200	A
Repetitive peak collector current	I_CRM	tP=1 ms	400	A
Total power dissipation	P_tot	T_C= 25℃, T_{vj max}= 150℃	698	W
Gate-emitter peak voltage	V_GES	-	±20	V

Characteristic Values

Parameter	Symbol	Conditions		Values			Unit
Parameter	Symbol	Conditions		Min.	Typ.	Max.	Unit
Collector-emitter saturation voltage	V_CE(sat)	V_GE =15V, I_C = 200A	T_vj= 25℃ T_vj= 125℃ T_vj= 150℃	- - -	1.70 2.00 2.10	1.9 - -	V
Gate threshold voltage	V_GE(th)	I_C =3.2 mA, V_CE = V_GE, T_vj= 25℃		5.0	5.832	6.8	V
Internalgate resistor	R_Gint	T_vj= 25℃		-	2	-	Ω
Collector-emitter cut-off current	I_CES	V_CE= 650 V , V_GE= 0V T_vj = 25℃		-	-	0.1	mA
Gate-emitter leakage current	I_GES	V_CE = 0 V, V_GE = 20 V, T_vj= 25℃		-	-	500	nA
Input capacitance	C_ies	V_CE = 25 V, V^GE = 0V, f = 1 MHz,T_vj= 25℃		-	15000	-	pF
Reverse transfer capacitance	C_res	V_CE = 25 V, V^GE = 0V, f = 1 MHz,T_vj= 25℃		-	280	-	pF
Turn-on delay time	t_d(on)	V_CE= 300 V, I_C = 200A, V_GE = ±15 V, R_G =4.7 Ω	T_vj= 25℃ T_vj = 125℃ T_vj = 150℃	- - -	0.106 0.116 0.118	- - -	μs
Rise time, inductive load	t_r		Tvj = 25℃ Tvj = 125℃ Tvj = 150℃	- - -	0.103 0.109 0.11	- - -
Turn-off delay time, inductive load	t_d(off)		Tvj = 25℃ Tvj = 125℃ Tvj = 150℃	- - -	0.165 0.177 0.179	- - -
Fall time, inductive load	t_f		Tvj = 25℃ Tvj = 125℃ Tvj = 150℃	- - -	0.084 0.096 0.1	- - -
Turn-on energy loss per pulse	E_on		Tvj = 25℃ Tvj = 125℃ Tvj = 150℃	- - -	1.591 3.045 3.442	- - -	mJ
Turn-off energy loss per pulse	E_off		Tvj = 25℃ Tvj = 125℃ Tvj = 150℃	- - -	4.458 5.176 5.37	- - -	mJ
SC data	I_sc	V_GE = 15 V,V_CC = 300 V t_P = 10 µs, T_vj = 150℃		-	960	-	A
Thermal resistance, junction-case	R_th_JC	per IGBT		-	-	0.179	K/W
Temperature under switching conditions	T_{vj op}			-40	-	150	℃

Diode, Inverter

Maximum ratings Values

Parameter	Symbol	Conditions	Values	Unit
Repetitive peak reverse voltage	V_RRM	T_v_j=25∘C	650	V
Continuous DC forward current	I_F		200	A
Repetitive peak forward current	I_FRM	t_p=1ms	400	A

Characteristic Values

Parameter	Symbol	Conditions		Values			Unit
Parameter	Symbol	Conditions		Min.	Typ.	Max.	Unit
Forward voltage	V_F	V_GE = 0 V, I_F = 200 A	T_vj = 25℃ T_vj= 125℃ T_vj= 150℃	- - -	1.661 1.682 1.651	2.25 - -	V
Peak reverse recovery current	I_RM	V_R=300V, I_F=200A, dI_F/dt=5400A/µs	Tvj = 25℃ Tvj = 125℃ Tvj = 150℃	- - -	76 85 89	- - -	A
Recovery charge	Q_r	V_R=300V, I_F=200A, dI_F/dt=5400A/µs	Tvj = 25℃ Tvj = 125℃ Tvj = 150℃	- - -	5.251 6.226 6.455	- - -	µC
Reverse recovery energy per pulse	E_rec	I_F=200A, V_R= 300V, V_GE = -15V	Tvj = 25℃ Tvj = 125℃ Tvj = 150℃	- - -	1.298 2.049 2.382	- - -	mJ
Thermal resistance, junction-case	R_thJC	per diode		-	-	0.303	K/W
Temperature over switching conditions	T_vj op			-40	-	150	℃

Module

Parameter	Symbol	Conditions	Values	Unit
Isolation test voltage	V_ISO_L		2.5	kV
Material of Module baseplate			Cu
Material of Internal Isolation			Al₂O₃
Creepage distance		Terminal to heatsink	10.0	mm
Stray inductance module	L_s		35	nH
Storage temperature	T_stg		−40∼125	∘C
Mounting torque for module mounting	M	Screw M6 - Mounting according to valid application note	3.0 ~ 6.0	N·m
Terminal connection torque	M	Screw M5 - Mounting according to valid application note	3.0 ~ 6.0	N·m
Weight	G		163	g